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1. product pro?le 1.1 general description the BF1205C is a combination of two dual gate mos-fet ampli?ers with shared source and gate 2 leads and an integrated switch. the integrated switch is operated by the gate 1 bias of ampli?er b. the source and substrate are interconnected. internal bias circuits enable dc stabilization and a very good cross-modulation performance during agc. integrated diodes between the gates and source protect against excessive input voltage surges. the transistor has a sot363 micro-miniature plastic package. 1.2 features n two low noise gain controlled ampli?ers in a single package; one with a fully integrated bias and one with a partly integrated bias n internal switch to save external components n superior cross-modulation performance during agc n high forward transfer admittance n high forward transfer admittance to input capacitance ratio. 1.3 applications n gain controlled low noise ampli?ers for vhf and uhf applications with 5 v supply voltage u digital and analog television tuners u professional communication equipment. BF1205C dual n-channel dual gate mos-fet rev. 01 18 may 2004 product data sheet caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling. msc895
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 2 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 1.4 quick reference data [1] t s is the temperature at the soldering point of the source lead. 2. pinning information table 1: quick reference data per mos-fet unless otherwise speci?ed. symbol parameter conditions min typ max unit v ds drain-source voltage - - 6 v i d drain current (dc) - - 30 ma p tot total power dissipation t s 107 c [1] - - 180 mw ? y fs ? forward transfer admittance f = 1 mhz ampli?er a; i d =19ma 26 31 41 ms ampli?er b; i d =13ma 28 33 43 ms c ig1-ss input capacitance at gate 1 f = 1 mhz ampli?er a - 2.2 2.7 pf ampli?er b - 2.0 2.5 pf c rss reverse transfer capacitance f = 1 mhz - 20 - ff nf noise ?gure ampli?er a; f = 400 mhz - 1.3 1.9 db ampli?er b; f = 800 mhz - 1.4 2.1 db x mod cross-modulation input level for k = 1% at 40 db agc ampli?er a 100 105 - db m v ampli?er b 100 103 - db m v t j junction temperature - - 150 c table 2: discrete pinning pin description simpli?ed outline symbol 1 gate 1 (a) 2 gate 2 3 gate 1 (b) 4 drain (b) 5 source 6 drain (a) 001aaa706 1 2 3 6 5 4 sym033 g1 (b) g1 (a) g2 s d (a) d (b) amp b amp a
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 3 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 3. ordering information 4. marking [1] * = p or -: made in hong kong. * = t: made in malaysia. * = w: made in china. 5. limiting values [1] t s is the temperature at the soldering point of the source lead. 6. thermal characteristics table 3: ordering information type number package name description version BF1205C - plastic surface mounted package; 6 leads sot363 table 4: marking type number marking code [1] BF1205C m6* table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mos-fet v ds drain-source voltage - 6 v i d drain current (dc) - 30 ma i g1 gate 1 current - 10 ma i g2 gate 2 current - 10 ma p tot total power dissipation t s 107 c [1] - 180 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c table 6: thermal characteristics symbol parameter conditions typ unit r th(j-s) thermal resistance from junction to soldering point 240 k/w
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 4 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 7. static characteristics [1] r g1 connects gate 1 (b) to v gg = 0 v (see figure 3 ). [2] r g1 connects gate 1 (b) to v gg = 5 v (see figure 3 ). fig 1. power derating curve. t s ( c) 0 200 150 50 100 001aaa551 100 150 50 200 250 p tot (mw) 0 table 7: static characteristics t j =25 c. symbol parameter conditions min typ max unit per mos-fet; unless otherwise speci?ed v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 m a ampli?er a 6 - - v ampli?er b 6 - - v v (br)g1-ss gate 1-source breakdown voltage v gs =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate 2-source breakdown voltage v gs =v ds =0v; i g2-s =10ma 6 - 10 v v (f)s-g1 forward source-gate 1 voltage v g2-s =v ds =0v; i s-g1 = 10 ma 0.5 - 1.5 v v (f)s-g2 forward source-gate 2 voltage v g1-s =v ds =0v; i s-g2 = 10 ma 0.5 - 1.5 v v g1-s(th) gate 1-source threshold voltage v ds =5v; v g2-s =4v; i d = 100 m a 0.3 - 1.0 v v g2-s(th) gate 2-source threshold voltage v ds =5v; v g1-s =5v; i d = 100 m a 0.4 - 1.0 v i dsx drain-source current v g2-s =4v; v ds(b) =5v; r g1 = 150 k w ampli?er a; v ds(a) =5v [1] 14 - 24 ma ampli?er b [2] 9 - 17 ma i g1-s gate1 cut-off current v g2-s =v ds(a) =0v ampli?er a; v g1-s(a) =5v; i d(b) = 0 a - - 50 na ampli?er b; v g1-s(b) =5v; v ds(b) = 0 v - - 50 na i g2-s gate 2 cut-off current v g2-s =4v; v g1-s(a) =v ds(a) =v ds(b) =0v; v g1-s(b) =0v; - - 20 na
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 5 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 8. dynamic characteristics 8.1 dynamic characteristics for ampli?er a (1) i d(b) ; r g1 = 120 k w . (2) i d(b) ; r g1 = 150 k w . (3) i d(b) ; r g1 = 180 k w . (4) i d(a) ; r g1 = 180 k w . (5) i d(a) ; r g1 = 150 k w . (6) i d(a) ; r g1 = 120 k w . v gg = 5 v: ampli?er a is off; ampli?er b is on v gg = 0 v: ampli?er a is on; ampli?er b is off. fig 2. drain currents of mos-fet a and b as function of v gg . fig 3. functional diagram. 001aaa552 8 12 4 16 20 i d (ma) 0 v gg (v) 05 4 23 1 (2) (5) (4) (6) (3) (1) 001aaa553 r g1 v gg g1 (b) g2 g1 (a) d (b) s d (a) table 8: dynamic characteristics for ampli?er a [1] common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 19 ma. symbol parameter conditions min typ max unit ? y fs ? forward transfer admittance t j =25 c263141ms c ig1-ss input capacitance at gate 1 f = 1 mhz - 2.2 2.7 pf c ig2-ss input capacitance at gate 2 f = 1 mhz - 3.0 - pf c oss output capacitance f = 1 mhz - 0.9 - pf c rss reverse transfer capacitance f = 1 mhz - 20 - ff g tr power gain b s =b s(opt) ; b l =b l(opt) f = 200 mhz; g s = 2 ms; g l = 0.5 ms 31 35 39 db f = 400 mhz; g s = 2 ms; g l = 1 ms 26 30 34 db f = 800 mhz; g s = 3.3 ms; g l =1ms 21 25 29 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s = 0 s - 3.0 - db f = 400 mhz; y s =y s(opt) - 1.3 1.9 db f = 800 mhz; y s =y s(opt) - 1.4 2.1 db
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 6 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet [1] for the mos-fet not in use: v g1-s(b) = 0 v; v ds(b) =0v. [2] measured in figure 33 test circuit. 8.1.1 graphs for ampli?er a x mod cross-modulation input level for k = 1%; f w = 50 mhz; f unw =60mhz [2] at 0 db agc 90 - - db m v at 10 db agc - 90 - db m v at 20 db agc - 99 - db m v at 40 db agc 100 105 - db m v table 8: dynamic characteristics for ampli?er a [1] continued common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 19 ma. symbol parameter conditions min typ max unit (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 c. (1) v g1-s(a) = 1.8 v. (2) v g1-s(a) = 1.7 v. (3) v g1-s(a) = 1.6 v. (4) v g1-s(a) = 1.5 v. (5) v g1-s(a) = 1.4 v. (6) v g1-s(a) = 1.3 v. (7) v g1-s(a) = 1.2 v. (8) v g1-s(a) = 1.1 v. (9) v g1-s(a) =1v. v g2-s =4v; v g1-s(b) =v ds(b) =0v; t j =25 c. fig 4. transfer characteristics; typical values. fig 5. output characteristics; typical values. v g1-s (v) 02 1.6 0.8 1.2 0.4 001aaa554 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (7) (6) 001aaa555 v ds (v) 06 4 2 16 8 24 32 i d (ma) 0 (2) (3) (4) (6) (7) (9) (8) (5) (1)
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 7 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 c. v ds(a) =5v; v g2-s =4v; v ds(b) =5v; v g1-s(b) =0v; t j =25 c. fig 6. forward transfer admittance as a function of drain current; typical values. fig 7. drain current as a function of internal g1 current (current in pin drain (b) if mos-fet (b) is switched off); typical values. i d (ma) 032 24 816 001aaa556 20 10 30 40 y fs (ms) 0 (1) (2) (3) (4) (5) (6) 001aaa557 i d (b) ( m a) 060 40 20 8 12 4 16 20 i d (a) (ma) 0
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 8 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet v ds(a) =v ds(b) =v supply , v g2-s =4v, t j =25 c, r g1(b) = 150 k w (connected to ground); see figure 3 . (1) v ds(b) =5v. (2) v ds(b) = 4.5 v. (3) v ds(b) =4v. (4) v ds(b) = 3.5 v. (5) v ds(b) =3v. (6) v ds(b) = 2.5 v. v ds(a) =5v; v g1-s(b) = 0 v; gate 1 (a) = open; t j =25 c. fig 8. drain current of ampli?er a as a function of supply voltage of a and b ampli?er; typical values. fig 9. drain current as a function of gate 2 and drain supply voltage; typical values. v supply (v) 05 4 23 1 001aaa558 8 12 4 16 20 i d (ma) 0 001aaa559 v g2-s (v) 06 4 2 16 8 24 32 i d (ma) 0 (1) (2) (3) (4) (5) (6) v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 33 . v ds(a) =v ds(b) =5v;v g1-s(b) = 0 v; f = 50 mhz; see figure 33 . fig 10. unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values. fig 11. gain reduction as a function of agc voltage; typical values. gain reduction (db) 050 40 20 30 10 001aaa560 100 90 110 120 v unw (db m v) 80 v agc (v) 04 3 12 001aaa561 30 20 40 10 0 gain reduction (db) 50
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 9 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet v ds(a) =v ds(b) =5v; v g1-s(b) = 0 v; f = 50 mhz; t amb =25 c; see figure 33 . v ds(a) =5v; v g2-s(a) =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma. fig 12. drain current as a function of gain reduction; typical values. fig 13. input admittance as a function of frequency; typical values. 001aaa562 gain reduction (db) 060 40 20 16 8 24 32 i d (ma) 0 001aaa564 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is v ds(a) =5v; v g2-s(a) =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma. v ds(a) =5v; v g2-s(a) =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma. fig 14. forward transfer admittance and phase as a function of frequency; typical values. fig 15. reverse transfer admittance and phase as a function of frequency: typical values. f (mhz) 10 10 3 10 2 001aaa565 10 10 2 y fs (ms) 1 -j fs (deg) 10 10 2 1 y fs -j fs 001aaa566 10 2 10 10 3 y rs (ms) 1 10 2 10 10 3 -j rs (deg) 1 f (mhz) 10 10 3 10 2 y rs -j rs
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 10 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 8.1.2 scattering parameters for ampli?er a 8.1.3 noise data for ampli?er a v ds(a) =5v; v g2-s(a) =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma. fig 16. output admittance as a function of frequency; typical values. 001aaa567 b os , g os (ms) 1 10 10 - 2 10 - 1 f (mhz) 10 10 3 10 2 b os g os table 9: scattering parameters for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 19 ma; v ds(b) =0v; v g-1s(b) =0v; t amb =25 c. f (mhz) s 11 s 21 s 12 s 22 magnitude ratio angle (deg) magnitude ratio angle (deg) magnitude ratio angle (deg) magnitude ratio angle (deg) 50 0.992 - 3.91 3.07 175.56 0.0007 83.61 0.992 - 1.47 100 0.990 - 7.76 3.06 171.18 0.0017 83.19 0.992 - 2.93 200 0.982 - 15.42 3.04 162.42 0.0026 78.19 0.990 - 5.84 300 0.971 - 22.99 3.01 153.79 0.0037 73.75 0.988 - 8.71 400 0.956 - 30.52 2.96 145.22 0.0047 69.82 0.985 - 11.59 500 0.938 - 37.83 2.90 136.78 0.0055 66.12 0.982 - 14.48 600 0.917 - 45.14 2.83 128.46 0.0061 62.11 0.979 - 17.31 700 0.893 - 52.31 2.76 120.20 0.0065 58.86 0.975 - 20.14 800 0.867 - 59.47 2.69 111.98 0.0068 58.28 0.972 - 22.98 900 0.838 - 66.23 2.60 103.90 0.0067 50.64 0.968 - 25.85 1000 0.807 - 73.10 2.52 95.875 0.0065 47.28 0.966 - 28.74 table 10: noise data for ampli?er a v ds(a) =5v; v g2-s =4v; i d(a) = 19 ma; v ds(b) =0v; v g-1s(b) =0v; t amb =25 c. f (mhz) f min (db) g opt r n ( w ) ratio (deg) 400 1.3 0.718 16.06 0.683 800 1.4 0.677 37.59 0.681
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 11 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 8.2 dynamic characteristics for ampli?er b [1] for the mos-fet not in use: v g1-s(a) = 0 v; v ds(a) =0 v. [2] measured in figure 34 test circuit. table 11: dynamic characteristics for ampli?er b common source; t amb =25 c; v g2-s =4v; v ds =5v; i d = 13 ma. symbol parameter conditions min typ max unit ? y fs ? forward transfer admittance t j =25 c 2833 43ms c ig1-ss input capacitance at gate 1 f = 1 mhz - 2.0 2.5 pf c ig2-ss input capacitance at gate 2 f = 1 mhz - 3.4 - pf c oss output capacitance f = 1 mhz - 0.85 - pf c rss reverse transfer capacitance f = 1 mhz - 20 - ff g tr power gain b s =b s(opt) ; b l =b l(opt) [1] f = 200 mhz; g s = 2 ms; g l = 0.5 ms 31 35 39 db f = 400 mhz; g s = 2 ms; g l = 1 ms 28 32 36 db f = 800 mhz; g s = 3.3 ms; g l = 1 ms 24 28 32 db nf noise ?gure f = 11 mhz; g s = 20 ms; b s =0s - 5 - db f = 400 mhz; y s =y s(opt) - 1.3 1.9 db f = 800 mhz; y s =y s(opt) - 1.4 2.1 db x mod cross-modulation input level for k = 1%; f w = 50 mhz; f unw = 60 mhz [2] at 0 db agc 90 - - db m v at 10 db agc - 88 - db m v at 20 db agc - 94 - db m v at 40 db agc 100 103 - db m v
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 12 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 8.2.1 graphs for ampli?er b (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. (1) v g1-s(b) = 1.6 v. (2) v g1-s(b) = 1.5 v. (3) v g1-s(b) = 1.4 v. (4) v g1-s(b) = 1.3 v. (5) v g1-s(b) = 1.2 v. (6) v g1-s(b) = 1.1 v. (7) v g1-s(b) =1v. v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c. fig 17. transfer characteristics; typical values. fig 18. output characteristics; typical values. v g1-s (v) 02 1.6 0.8 1.2 0.4 001aaa568 10 20 30 i d (ma) 0 (4) (5) (6) (7) (2) (3) (1) 001aaa569 v ds (v) 06 4 2 16 8 24 32 i d (ma) 0 (1) (2) (5) (6) (7) (4) (3)
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 13 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. (1) v g2-s =4v. (2) v g2-s = 3.5 v. (3) v g2-s =3v. (4) v g2-s = 2.5 v. (5) v g2-s =2v. (6) v g2-s = 1.5 v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. fig 19. gate 1 current as a function of gate 1 voltage; typical values. fig 20. forward transfer admittance as a function of drain current; typical values. v g1-s (v) 02 1.6 0.8 1.2 0.4 001aaa570 40 60 20 80 100 i g1 ( m a) 0 (1) (2) (4) (6) (7) (3) (5) i d (ma) 032 24 816 001aaa571 20 10 30 40 y fs (ms) 0 (1) (2) (3) (4) (5) (6) (7) v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1(b) = 150 k w (connected to v gg ); see figure 3 . fig 21. drain current as a function of gate 1 current; typical values. fig 22. drain current as a function of gate 1 supply voltage (v gg ); typical values. i g1 ( m a) 050 40 20 30 10 001aaa572 8 16 24 i d (ma) 0 v gg (v) 05 4 23 1 001aaa573 8 4 12 16 i d (ma) 0
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 14 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet (1) r g1(b) =68k w . (2) r g1(b) =82k w . (3) r g1(b) = 100 k w . (4) r g1(b) = 120 k w . (5) r g1(b) = 150 k w . (6) r g1(b) = 180 k w . (7) r g1(b) = 220 k w . (8) r g1(b) = 270 k w . v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1(b) is connected to v gg ; see figure 3 . (1) v gg = 5.0 v. (2) v gg = 4.5 v. (3) v gg = 4.0 v. (4) v gg = 3.5 v. (5) v gg = 3.0 v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1(b) = 150 k w (connected to v gg ); see figure 3 . fig 23. drain current as a function of gate 1 (v gg ), drain supply voltage and value of rg1; typical values. fig 24. drain current as a function of gate 2 voltage; typical values. 001aaa574 v gg = v ds (v) 06 4 2 8 16 24 i d (ma) 0 (1) (2) (3) (4) (5) (8) (6) (7) 001aaa575 v g2-s (v) 06 4 2 8 4 12 16 i d (ma) 0 (1) (3) (4) (5) (2)
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 15 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet (1) v gg = 5.0 v. (2) v gg = 4.5 v. (3) v gg = 4.0 v. (4) v gg = 3.5 v. (5) v gg = 3.0 v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1(b) = 150 k w (connected to v gg ); see figure 3 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1(b) = 150 k w (connected to v gg ); f w = 50 mhz; f unw = 60 mhz; t amb =25 c; see figure 34 . fig 25. gate 1 current as a function of gate 2 voltage; typical values. fig 26. unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values. v g2-s (v) 06 4 2 001aaa576 10 20 30 i g1 ( m a) 0 (1) (2) (4) (5) (3) 001aaa577 gain reduction (db) 060 40 20 100 90 110 120 v unw (db m v) 80 v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1(b) = 150 k w (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 34 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1(b) = 150 k w (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 34 . fig 27. typical gain reduction as a function of agc voltage. fig 28. drain current as a function of gain reduction; typical values. v agc (v) 04 3 12 001aaa578 30 20 40 10 0 gain reduction (db) 50 001aaa579 gain reduction (db) 060 40 20 8 4 12 16 i d (ma) 0
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 16 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) = 13 ma. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =13ma. fig 29. input admittance as a function of frequency; typical values. fig 30. forward transfer admittance and phase as a function of frequency; typical values. 001aaa581 f (mhz) 10 10 3 10 2 10 - 1 1 10 10 2 b is , g is (ms) 10 - 2 b is g is f (mhz) 10 10 3 10 2 001aaa582 10 10 2 y fs (ms) 1 -j fs (deg) 10 10 2 1 y fs -j fs v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =13ma. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; i d(b) =13ma. fig 31. reverse transfer admittance and phase as a function of frequency; typical values. fig 32. output admittance as a function of frequency; typical values. 001aaa583 10 2 10 10 3 y rs ( m s) 1 10 2 10 10 3 -j rs (deg) 1 f (mhz) 10 10 3 10 2 y rs -j rs 001aaa584 b os , g os (ms) 1 10 10 - 2 10 - 1 f (mhz) 10 10 3 10 2 b os g os
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 17 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 8.2.2 scattering parameters for ampli?er b 8.2.3 noise data for ampli?er b table 12: scattering parameters for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 13 ma; v ds(a) =0v; v g1-s(a) =0v; t amb =25 c. f (mhz) s 11 s 21 s 12 s 22 magnitude ratio angle (deg) magnitude ratio angle (deg) magnitude ratio angle (deg) magnitude ratio angle (deg) 50 0.986 - 3.66 3.26 175.93 0.0008 84.23 0.988 - 1.65 100 0.982 - 7.01 3.24 172.04 0.0015 84.91 0.988 - 3.27 200 0.975 - 13.71 3.22 164.24 0.0029 83.96 0.986 - 6.50 300 0.966 - 20.36 3.19 156.53 0.0042 82.86 0.984 - 9.69 400 0.955 - 27.04 3.15 148.86 0.0055 81.88 0.982 - 12.88 500 0.943 - 33.62 3.10 141.24 0.0066 80.92 0.978 - 16.07 600 0.927 - 40.16 3.05 133.70 0.0076 80.15 0.975 - 19.21 700 0.909 - 46.70 2.99 126.13 0.0086 79.68 0.972 - 22.35 800 0.891 - 52.07 2.92 118.64 0.0094 78.28 0.968 - 25.52 900 0.868 - 59.48 2.84 111.09 0.0100 78.28 0.965 - 28.65 1000 0.846 - 65.86 2.77 103.58 0.0107 78.15 0.961 - 31.85 table 13: noise data for ampli?er b v ds(b) =5v; v g2-s =4v; i d(b) = 13 ma; v ds(a) =0v; v g1-s(a) =0v; t amb =25 c. f (mhz) f min (db) g opt r n ( w ) ratio (deg) 400 1.3 0.695 13.11 0.694 800 1.4 0.674 32.77 0.674
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 18 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 9. test information fig 33. cross-modulation test set-up for ampli?er a. 50 w 10 k w r gen 50 w r l 50 w 50 w r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1 (b) d (b) d (a) 4.7 nf 4.7 nf 4.7 nf g1 (a) BF1205C v gg 0v v ds (b) 5v v ds (a) 5v v agc l2 2.2 m h l1 2.2 m h 001aaa563 v i fig 34. cross-modulation test set-up for ampli?er b. 50 w 10 k w r gen 50 w 50 w r g1 4.7 nf 4.7 nf 4.7 nf g2 s g1 (b) d (b) d (a) 4.7 nf 4.7 nf 4.7 nf g1 (a) BF1205C v gg 5v v ds (b) 5v v ds (a) 5v v agc l2 2.2 m h l1 2.2 m h r l 50 w 001aaa580 v i
9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 19 of 22 philips semiconductors BF1205C dual n-channel dual gate mos-fet 10. package outline fig 35. package outline. references outline version european projection issue date iec jedec eiaj sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 97-02-28
philips semiconductors BF1205C dual n-channel dual gate mos-fet 9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 20 of 22 11. revision history table 14: revision history document id release date data sheet status change notice order number supersedes BF1205C_1 20040518 product data - 9397 750 13005 -
philips semiconductors BF1205C dual n-channel dual gate mos-fet 9397 750 13005 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 18 may 2004 21 of 22 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 18 may 2004 document order number: 9397 750 13005 published in the netherlands philips semiconductors BF1205C dual n-channel dual gate mos-fet 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 dynamic characteristics for ampli?er a . . . . . . . 5 8.1.1 graphs for ampli?er a . . . . . . . . . . . . . . . . . . . . 6 8.1.2 scattering parameters for ampli?er a . . . . . . . 10 8.1.3 noise data for ampli?er a . . . . . . . . . . . . . . . . 10 8.2 dynamic characteristics for ampli?er b . . . . . . 11 8.2.1 graphs for ampli?er b . . . . . . . . . . . . . . . . . . . 12 8.2.2 scattering parameters for ampli?er b . . . . . . . 17 8.2.3 noise data for ampli?er b . . . . . . . . . . . . . . . . 17 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 18 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 19 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 21 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 15 contact information . . . . . . . . . . . . . . . . . . . . 21

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